GA35XCP12-247 - GeneSiC Semiconductor - Transistors - IGBTs - Single
REF: GA35XCP12-247 GeneSiC Semiconductor
GA35XCP12-247

GeneSiC Semiconductor

IGBT 1200V SOT247

GA35XCP12-247 is a Transistors - IGBTs - Single manufactured by GeneSiC Semiconductor. IGBT 1200V SOT247. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 1,931

Specifications

17 parameters
Product StatusObsolete
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)35 A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 35A
Power - Max-
Switching Energy2.66mJ (on), 4.35mJ (off)
Input TypeStandard
Gate Charge50 nC
Td (on/off) @ 25°C-
Test Condition800V, 35A, 22Ohm, 15V
Reverse Recovery Time (trr)36 ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AB

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