DIODE SILICON 1.2KV 8A TO257
1N8026-GA is a Diodes - Rectifiers - Single manufactured by GeneSiC Semiconductor. DIODE SILICON 1.2KV 8A TO257. Key specifications: mounting type Through Hole, package / case TO-257-3.
In Stock: 6,876
| Product Status | Obsolete |
|---|---|
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 8A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 2.5 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
|---|---|
| Capacitance @ Vr, F | 237pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-257-3 |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | -55°C ~ 250°C |
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