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HGTP12N60A4D

In Stock: 5,497
HGTP12N60A4D - Fairchild Semiconductor - Transistors - IGBTs - Single
REF: HGTP12N60A4D Fairchild Semiconductor
HGTP12N60A4D

Fairchild Semiconductor

INSULATED GATE BIPOLAR TRANSISTO

HGTP12N60A4D is a Transistors - IGBTs - Single manufactured by Fairchild Semiconductor. INSULATED GATE BIPOLAR TRANSISTO. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 54 A.

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In Stock: 5,497

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)54 A
Current - Collector Pulsed (Icm)96 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Power - Max167 W
Switching Energy55µJ (on), 50µJ (off)
Input TypeStandard
Gate Charge78 nC
Td (on/off) @ 25°C17ns/96ns
Test Condition390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)30 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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