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ZXMN3F31DN8TA

In Stock: 2,786
ZXMN3F31DN8TA - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: ZXMN3F31DN8TA Diodes Incorporated
ZXMN3F31DN8TA

Diodes Incorporated

MOSFET 2N-CH 30V 5.7A 8SOIC

ZXMN3F31DN8TA is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 30V 5.7A 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 1.8W.

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In Stock: 2,786

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.7A
Rds On (Max) @ Id, Vgs24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds608pF @ 15V
Power - Max1.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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