Name: ZXMN2A02N8TA
Brand: Diodes Incorporated
SKU: ZXMN2A02N8TA
Price: 1.61 USD
Availability: InStock

REF: ZXMN2A02N8TA Diodes Incorporated

ZXMN2A02N8TA

Diodes Incorporated

MOSFET N-CH 20V 8.3A 8SO

ZXMN2A02N8TA is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 20V 8.3A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

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In Stock: 9,017

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	20mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	18.9 nC @ 4.5 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.56W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)