Name: ZXMN10A11K
Brand: Diodes Incorporated
SKU: ZXMN10A11K
Availability: InStock

REF: ZXMN10A11K Diodes Incorporated

ZXMN10A11K

MOSFET N-CH 100V 2.4A TO252-3

ZXMN10A11K is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V 2.4A TO252-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 4,880

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	350mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.4 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	274 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.11W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63