ZXMN10A08DN8TA - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: ZXMN10A08DN8TA Diodes Incorporated
ZXMN10A08DN8TA

Diodes Incorporated

MOSFET 2N-CH 100V 1.6A 8-SOIC

ZXMN10A08DN8TA is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 100V 1.6A 8-SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 1.25W.

In Stock: 5,725

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1.6A
Rds On (Max) @ Id, Vgs250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds405pF @ 50V
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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