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ZXMC3F31DN8TA

In Stock: 1,322
ZXMC3F31DN8TA - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: ZXMC3F31DN8TA Diodes Incorporated
ZXMC3F31DN8TA

Diodes Incorporated

MOSFET N/P-CH 30V 6.8A/4.9A 8SO

ZXMC3F31DN8TA is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET N/P-CH 30V 6.8A/4.9A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 1.8W.

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In Stock: 1,322

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.8A, 4.9A
Rds On (Max) @ Id, Vgs24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds608pF @ 15V
Power - Max1.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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