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ZTX857QSTZ

In Stock: 3,980
ZTX857QSTZ - Diodes Incorporated - Transistors - Bipolar (BJT) - Single
REF: ZTX857QSTZ Diodes Incorporated
ZTX857QSTZ

Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR EP3 AM

ZTX857QSTZ is a Transistors - Bipolar (BJT) - Single manufactured by Diodes Incorporated. PWR HI VOLTAGE TRANSISTOR EP3 AM. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 200°C (TJ), package / case E-Line-3, Formed Leads, current - collector (ic) (max) 3 A.

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In Stock: 3,980

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)300 V
Vce Saturation (Max) @ Ib, Ic250mV @ 600mA, 3A
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 10V
Power - Max1.2 W
Frequency - Transition80MHz
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseE-Line-3, Formed Leads
Supplier Device PackageE-Line (TO-92 compatible)

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