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HTMN5130SSD-13

In Stock: 1,833
HTMN5130SSD-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: HTMN5130SSD-13 Diodes Incorporated
HTMN5130SSD-13

Diodes Incorporated

MOSFET 2N-CH 55V 2.6A 8SOIC

HTMN5130SSD-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 55V 2.6A 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 1.7W.

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In Stock: 1,833

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C2.6A
Rds On (Max) @ Id, Vgs130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds218.7pF @ 25V
Power - Max1.7W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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