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HBDM60V600W-7

In Stock: 8,112
HBDM60V600W-7 - Diodes Incorporated - Transistors - Bipolar (BJT) - Arrays
REF: HBDM60V600W-7 Diodes Incorporated
HBDM60V600W-7

Diodes Incorporated

TRANS NPN/PNP 65V/60V SOT363

HBDM60V600W-7 is a Transistors - Bipolar (BJT) - Arrays manufactured by Diodes Incorporated. TRANS NPN/PNP 65V/60V SOT363. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, current - collector (ic) (max) 500mA, 600mA.

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In Stock: 8,112

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)500mA, 600mA
Voltage - Collector Emitter Breakdown (Max)65V, 60V
Vce Saturation (Max) @ Ib, Ic400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V / 100 @ 150mA, 10V
Power - Max200mW
Frequency - Transition100MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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