DXTN5820DFDB-7 - Diodes Incorporated - Transistors - Bipolar (BJT) - Single
REF: DXTN5820DFDB-7 Diodes Incorporated
DXTN5820DFDB-7

Diodes Incorporated

SS LOW SAT TRANSISTOR U-DFN2020-

DXTN5820DFDB-7 is a Transistors - Bipolar (BJT) - Single manufactured by Diodes Incorporated. SS LOW SAT TRANSISTOR U-DFN2020-. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-UDFN Exposed Pad, current - collector (ic) (max) 6 A.

In Stock: 3,619

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)20 V
Vce Saturation (Max) @ Ib, Ic275mV @ 300mA, 6A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce280 @ 500mA, 2V
Power - Max690 mW
Frequency - Transition80MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case3-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-3 (Type B)

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