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DXTN10060DFJBWQ-7

In Stock: 2,748
DXTN10060DFJBWQ-7 - Diodes Incorporated - Transistors - Bipolar (BJT) - Single
REF: DXTN10060DFJBWQ-7 Diodes Incorporated
DXTN10060DFJBWQ-7

Diodes Incorporated

TRANS NPN 60V 4A 3DFN

DXTN10060DFJBWQ-7 is a Transistors - Bipolar (BJT) - Single manufactured by Diodes Incorporated. TRANS NPN 60V 4A 3DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 3-UDFN Exposed Pad, current - collector (ic) (max) 4 A.

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In Stock: 2,748

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic320mV @ 200mA, 4A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce340 @ 200mA, 2V
Power - Max1.8 W
Frequency - Transition125MHz
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case3-UDFN Exposed Pad
Supplier Device PackageW-DFN2020-3 (Type A)

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