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DMTH8001STLWQ-13

In Stock: 2,738
DMTH8001STLWQ-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMTH8001STLWQ-13 Diodes Incorporated
DMTH8001STLWQ-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI10

DMTH8001STLWQ-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V POWERDI10. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSFN.

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In Stock: 2,738

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C270A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs138 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8894 pF @ 50 V
FET Feature-
Power Dissipation (Max)6W (Ta), 250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePOWERDI1012-8
Package / Case8-PowerSFN

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