Name: DMTH6012LPSW-13
Brand: Diodes Incorporated
SKU: DMTH6012LPSW-13
Price: 0.27 USD
Availability: InStock

REF: DMTH6012LPSW-13 Diodes Incorporated

DMTH6012LPSW-13

Diodes Incorporated

MOSFET N-CH 60V 11.5/50.5A PWRDI

DMTH6012LPSW-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 60V 11.5/50.5A PWRDI. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 2,862

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta), 50.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	14mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13.6 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	785 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 53.6W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerDI5060-8 (Type Q)
Package / Case	8-PowerTDFN