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DMTH4M70SPGWQ-13

In Stock: 2,145
DMTH4M70SPGWQ-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMTH4M70SPGWQ-13 Diodes Incorporated
DMTH4M70SPGWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI808

DMTH4M70SPGWQ-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 31V~40V POWERDI808. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case SOT-1235.

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In Stock: 2,145

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C460A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs0.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs117.1 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10053 pF @ 20 V
FET Feature-
Power Dissipation (Max)5.6W (Ta), 428W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI8080-5
Package / CaseSOT-1235

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