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DMTH10H2M5STLW-13

In Stock: 6,061
DMTH10H2M5STLW-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMTH10H2M5STLW-13 Diodes Incorporated
DMTH10H2M5STLW-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI10

DMTH10H2M5STLW-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V POWERDI10. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSFN.

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In Stock: 6,061

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C215A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs124.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8450 pF @ 50 V
FET Feature-
Power Dissipation (Max)5.8W (Ta), 230.8W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePOWERDI1012-8
Package / Case8-PowerSFN

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