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DMTH10H025LPSQ-13

In Stock: 1,019
DMTH10H025LPSQ-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMTH10H025LPSQ-13 Diodes Incorporated
DMTH10H025LPSQ-13

Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

DMTH10H025LPSQ-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V PWRDI5060. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 1,019

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C9.3A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1477 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI5060-8
Package / Case8-PowerTDFN

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