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DMTH10H017LPDQ-13

In Stock: 2,708
DMTH10H017LPDQ-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMTH10H017LPDQ-13 Diodes Incorporated
DMTH10H017LPDQ-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

DMTH10H017LPDQ-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V POWERDI50. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN, power - max 1.5W (Ta), 93W (Tc).

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In Stock: 2,708

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1986pF @ 50V
Power - Max1.5W (Ta), 93W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type E)

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