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DMTH10H015SK3Q-13

In Stock: 1,782
DMTH10H015SK3Q-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMTH10H015SK3Q-13 Diodes Incorporated
DMTH10H015SK3Q-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

DMTH10H015SK3Q-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V TO252 T&R. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 1,782

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30.1 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2343 pF @ 50 V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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