DMTH10H010LCT - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMTH10H010LCT Diodes Incorporated
DMTH10H010LCT

Diodes Incorporated

MOSFET N-CH 100V 108A TO220AB

DMTH10H010LCT is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V 108A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

In Stock: 3,959

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C108A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2592 pF @ 50 V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 166W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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