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DMT69M9LPDW-13

In Stock: 5,567
DMT69M9LPDW-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMT69M9LPDW-13 Diodes Incorporated
DMT69M9LPDW-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

DMT69M9LPDW-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 41V~60V POWERDI506. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN, power - max 2.5W (Ta), 40.3W (Tc).

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In Stock: 5,567

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs12.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2212pF @ 30V
Power - Max2.5W (Ta), 40.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type UXD)

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