DMT67M8LCG-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMT67M8LCG-13 Diodes Incorporated
DMT67M8LCG-13

Diodes Incorporated

MOSFET N-CH 60V 16A/64.6A 8DFN

DMT67M8LCG-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 60V 16A/64.6A 8DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

In Stock: 6,077

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 64.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2130 pF @ 30 V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageV-DFN3333-8 (Type B)
Package / Case8-PowerVDFN

Need a Quote for DMT67M8LCG-13?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →