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DMT64M8LCG-13

In Stock: 8,743
DMT64M8LCG-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMT64M8LCG-13 Diodes Incorporated
DMT64M8LCG-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V V-DFN3333

DMT64M8LCG-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V V-DFN3333. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 8,743

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C16.1A (Ta), 77.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2664 pF @ 30 V
FET Feature-
Power Dissipation (Max)990mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageV-DFN3333-8 (Type B)
Package / Case8-PowerVDFN

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