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DMT6018LDR-13

In Stock: 8,999
DMT6018LDR-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMT6018LDR-13 Diodes Incorporated
DMT6018LDR-13

Diodes Incorporated

MOSFET 2 N-CH 60V 11.4A DFN3030

DMT6018LDR-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2 N-CH 60V 11.4A DFN3030. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN, power - max 1.9W.

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In Stock: 8,999

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta)
Rds On (Max) @ Id, Vgs17mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds869pF @ 30V
Power - Max1.9W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackageV-DFN3030-8

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