DMT6009LJ3 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMT6009LJ3 Diodes Incorporated
DMT6009LJ3

Diodes Incorporated

MOSFET N-CH 60V 74.5A TO251

DMT6009LJ3 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 60V 74.5A TO251. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 2,862

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C74.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33.5 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1925 pF @ 30 V
FET Feature-
Power Dissipation (Max)2.9W (Ta), 83.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (Type TH)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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