Name: DMT5012LFVW-13
Brand: Diodes Incorporated
SKU: DMT5012LFVW-13
Price: 0.22 USD
Availability: InStock

REF: DMT5012LFVW-13 Diodes Incorporated

DMT5012LFVW-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

DMT5012LFVW-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 41V~60V POWERDI333. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 1,642

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V
Current - Continuous Drain (Id) @ 25°C	11.7A (Ta), 51.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.6 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	738 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2.7W (Ta), 51.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Package / Case	8-PowerVDFN