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DMT35M4LFDF4-13

In Stock: 8,114
DMT35M4LFDF4-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMT35M4LFDF4-13 Diodes Incorporated
DMT35M4LFDF4-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V X2-DFN2020

DMT35M4LFDF4-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 25V~30V X2-DFN2020. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-PowerXDFN.

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In Stock: 8,114

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.9 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1009 pF @ 15 V
FET Feature-
Power Dissipation (Max)910mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX2-DFN2020-6 (Type W)
Package / Case6-PowerXDFN

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