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DMT32M4LPSW-13

In Stock: 4,610
DMT32M4LPSW-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMT32M4LPSW-13 Diodes Incorporated
DMT32M4LPSW-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI506

DMT32M4LPSW-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 25V~30V POWERDI506. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 4,610

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3944 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePowerDI5060-8 (Type UX)
Package / Case8-PowerTDFN

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