Name: DMT3011LDT-7
Brand: Diodes Incorporated
SKU: DMT3011LDT-7
Price: 0.97 USD
Availability: InStock

REF: DMT3011LDT-7 Diodes Incorporated

DMT3011LDT-7

Diodes Incorporated

MOSFET 2N-CH 30V 8A V-DFN3030-8

DMT3011LDT-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 30V 8A V-DFN3030-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 155°C (TJ), package / case 8-VDFN Exposed Pad, power - max 1.9W.

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In Stock: 5,994

Specifications

14 parameters

Product Status	Active
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A, 10.7A
Rds On (Max) @ Id, Vgs	20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	641pF @ 15V
Power - Max	1.9W
Operating Temperature	-55°C ~ 155°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-VDFN Exposed Pad
Supplier Device Package	V-DFN3030-8 (Type K)