Name: DMT3009UFVW-7
Brand: Diodes Incorporated
SKU: DMT3009UFVW-7
Price: 0.19 USD
Availability: InStock

REF: DMT3009UFVW-7 Diodes Incorporated

DMT3009UFVW-7

Diodes Incorporated

MOSFET N-CH 30V 10.6A/30A PWRDI

DMT3009UFVW-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 30V 10.6A/30A PWRDI. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 1,532

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	10.6A (Ta), 30A
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.4 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	894 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta), 2.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Package / Case	8-PowerVDFN