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DMT3009UFVW-13

In Stock: 7,483
DMT3009UFVW-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMT3009UFVW-13 Diodes Incorporated
DMT3009UFVW-13

Diodes Incorporated

MOSFET N-CH 30V 10.6A/30A PWRDI

DMT3009UFVW-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 30V 10.6A/30A PWRDI. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 7,483

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C10.6A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11mOhm @ 11A, 10V
Vgs(th) (Max) @ Id1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.4 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds894 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.2W (Ta), 2.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
Package / Case8-PowerVDFN

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