Name: DMT3009LFVWQ-13
Brand: Diodes Incorporated
SKU: DMT3009LFVWQ-13
Price: 0.32 USD
Availability: InStock

REF: DMT3009LFVWQ-13 Diodes Incorporated

DMT3009LFVWQ-13

Diodes Incorporated

MOSFET N-CH 30V 12A PWRDI3333

DMT3009LFVWQ-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 30V 12A PWRDI3333. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

Datasheet Request a Quote

In Stock: 6,518

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	3.8V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	823 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 35.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Package / Case	8-PowerVDFN