Name: DMT12H090LFDF4-7
Brand: Diodes Incorporated
SKU: DMT12H090LFDF4-7
Price: 0.40 USD
Availability: InStock

REF: DMT12H090LFDF4-7 Diodes Incorporated

DMT12H090LFDF4-7

Diodes Incorporated

MOSFET N-CH 115V 3.4A 6DFN

DMT12H090LFDF4-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 115V 3.4A 6DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-PowerXDFN.

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In Stock: 3,606

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	115 V
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3V, 10V
Rds On (Max) @ Id, Vgs	90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	251 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN2020-6
Package / Case	6-PowerXDFN