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DMT10H9M9SH3

In Stock: 8,710
DMT10H9M9SH3 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMT10H9M9SH3 Diodes Incorporated
DMT10H9M9SH3

Diodes Incorporated

MOSFET BVDSS: 61V~100V TO251 TUB

DMT10H9M9SH3 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V TO251 TUB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

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In Stock: 8,710

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2085 pF @ 50 V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Stub Leads, IPak

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