Name: DMT10H9M9LCT
Brand: Diodes Incorporated
SKU: DMT10H9M9LCT
Price: 1.23 USD
Availability: InStock

REF: DMT10H9M9LCT Diodes Incorporated

DMT10H9M9LCT

Diodes Incorporated

MOSFET BVDSS: 61V~100V TO220AB T

DMT10H9M9LCT is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V TO220AB T. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 5,990

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40.2 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2309 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3