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DMT10H072LFV-7

In Stock: 9,573
DMT10H072LFV-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMT10H072LFV-7 Diodes Incorporated
DMT10H072LFV-7

Diodes Incorporated

MOSFET N-CH 100V PWRDI3333

DMT10H072LFV-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V PWRDI3333. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 9,573

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C4.7A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds228 pF @ 50 V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8 (Type UX)
Package / Case8-PowerVDFN

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