Name: DMT10H072LFDF-13
Brand: Diodes Incorporated
SKU: DMT10H072LFDF-13
Price: 0.27 USD
Availability: InStock

REF: DMT10H072LFDF-13 Diodes Incorporated

DMT10H072LFDF-13

Diodes Incorporated

MOSFET N-CH 100V 4A 6UDFN

DMT10H072LFDF-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V 4A 6UDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad.

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In Stock: 3,107

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.1 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	266 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type F)
Package / Case	6-UDFN Exposed Pad