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DMT10H032LDV-13

In Stock: 8,420
DMT10H032LDV-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMT10H032LDV-13 Diodes Incorporated
DMT10H032LDV-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

DMT10H032LDV-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V POWERDI33. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN, power - max 1W (Ta).

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In Stock: 8,420

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds683pF @ 50V
Power - Max1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePowerDI3333-8 (Type UXC)

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