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DMT10H017LPD-13

In Stock: 5,818
DMT10H017LPD-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMT10H017LPD-13 Diodes Incorporated
DMT10H017LPD-13

Diodes Incorporated

MOSFET BVDSS: 61V-100V POWERDI50

DMT10H017LPD-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 61V-100V POWERDI50. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN, power - max 2.2W (Ta), 78W (Tc).

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In Stock: 5,818

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C54.7A (Tc)
Rds On (Max) @ Id, Vgs17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1986pF @ 50V
Power - Max2.2W (Ta), 78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8

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