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DMT10H015LPS-13

In Stock: 6,768
DMT10H015LPS-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMT10H015LPS-13 Diodes Incorporated
DMT10H015LPS-13

Diodes Incorporated

MOSFET N-CH 100V 7.3A PWRDI5060

DMT10H015LPS-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V 7.3A PWRDI5060. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 6,768

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C7.3A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1871 pF @ 50 V
FET Feature-
Power Dissipation (Max)1.3W (Ta), 46W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI5060-8
Package / Case8-PowerTDFN

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