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DMT10H015LCG-13

In Stock: 3,974
DMT10H015LCG-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMT10H015LCG-13 Diodes Incorporated
DMT10H015LCG-13

Diodes Incorporated

MOSFET N-CH 100V 9.4A/34A 8DFN

DMT10H015LCG-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V 9.4A/34A 8DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 155°C (TJ), package / case 8-PowerVDFN.

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In Stock: 3,974

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1871 pF @ 50 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 155°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageV-DFN3333-8
Package / Case8-PowerVDFN

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