Name: DMT10H009LSS-13
Brand: Diodes Incorporated
SKU: DMT10H009LSS-13
Price: 0.51 USD
Availability: InStock

REF: DMT10H009LSS-13 Diodes Incorporated

DMT10H009LSS-13

Diodes Incorporated

MOSFET N-CH 100V 13A/48A 8SO T&R

DMT10H009LSS-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V 13A/48A 8SO T&R. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

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In Stock: 1,346

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40.2 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2309 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)