Name: DMT10H009LH3
Brand: Diodes Incorporated
SKU: DMT10H009LH3
Price: 0.95 USD
Availability: InStock

REF: DMT10H009LH3 Diodes Incorporated

DMT10H009LH3

Diodes Incorporated

MOSFET N-CH 100V 84A TO251

DMT10H009LH3 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V 84A TO251. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

Datasheet Request a Quote

In Stock: 4,250

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20.2 nC @ 4.5 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2309 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Stub Leads, IPak