DMP45H4D9HJ3 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMP45H4D9HJ3 Diodes Incorporated
DMP45H4D9HJ3

Diodes Incorporated

MOSFET P-CH 450V 4.6A TO251

DMP45H4D9HJ3 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET P-CH 450V 4.6A TO251. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3, IPak, Short Leads.

In Stock: 5,704

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)450 V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.7 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds547 pF @ 25 V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3, IPak, Short Leads

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