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DMNH10H021SPSW-13

In Stock: 9,347
DMNH10H021SPSW-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMNH10H021SPSW-13 Diodes Incorporated
DMNH10H021SPSW-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

DMNH10H021SPSW-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V POWERDI50. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 9,347

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3789 pF @ 50 V
FET Feature-
Power Dissipation (Max)1.8W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePowerDI5060-8 (Type UX)
Package / Case8-PowerTDFN

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