Name: DMN90H2D2HCTI
Brand: Diodes Incorporated
SKU: DMN90H2D2HCTI
Price: 1.80 USD
Availability: InStock

REF: DMN90H2D2HCTI Diodes Incorporated

DMN90H2D2HCTI

Diodes Incorporated

MOSFET N-CH 900V 6A ITO220AB

DMN90H2D2HCTI is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 900V 6A ITO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.

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In Stock: 2,017

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20.3 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1487 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220AB
Package / Case	TO-220-3 Full Pack, Isolated Tab