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DMN66D0LDWQ-13

In Stock: 6,703
DMN66D0LDWQ-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN66D0LDWQ-13 Diodes Incorporated
DMN66D0LDWQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT363 T&R

DMN66D0LDWQ-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 41V~60V SOT363 T&R. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 400mW (Ta).

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In Stock: 6,703

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C217mA (Ta)
Rds On (Max) @ Id, Vgs6Ohm @ 115mA, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds29.3pF @ 25V
Power - Max400mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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