Name: DMN65D7LFR4-7
Brand: Diodes Incorporated
SKU: DMN65D7LFR4-7
Price: 0.13 USD
Availability: InStock

REF: DMN65D7LFR4-7 Diodes Incorporated

DMN65D7LFR4-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V X2-DFN1010

DMN65D7LFR4-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 41V~60V X2-DFN1010. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-XDFN Exposed Pad.

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In Stock: 4,355

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5Ohm @ 40mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.04 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	41 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	600mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN1010-4 (Type B)
Package / Case	4-XDFN Exposed Pad