Name: DMN60H080DS-7
Brand: Diodes Incorporated
SKU: DMN60H080DS-7
Price: 0.41 USD
Availability: InStock

REF: DMN60H080DS-7 Diodes Incorporated

DMN60H080DS-7

Diodes Incorporated

MOSFET N-CH 600V 80MA SOT23-3

DMN60H080DS-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 600V 80MA SOT23-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

Datasheet Request a Quote

In Stock: 8,790

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	80mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	100Ohm @ 60mA, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	25 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3